ssf 2145ch6 ? silikron semiconductor co.,ltd. 2011.0 7 . 22 version : 1.0 page 1 of 6 www.silikron.com main product characteristics: features and be nefits: description: absolute max rating: symbol parameter max. units n - channel p - channel i d @ tc = 25c continuous drain current, v gs @ 4.5 v 4.8 - 2.9 a i d @ tc = 100c continuous drain current, v gs @ 4.5 v 3.9 - 2.4 i dm pulsed drain current 1 7 - 1 1 p d @tc = 25c power dissipation 1.7 1. 7 w v ds drain - source voltage 20 - 20 v v gs gate - to - source voltage 8 8 v t j t stg operating junction and storage temperature range - 55 to + 1 50 - 55 to + 1 50 c thermal resistance symbol characterizes typ. max. units n - channel p - channel r ja j unction - to - ambient ( t 10s) 76 114 /w junction - to - ambient (pcb mounted, steady - state) 53 53 /w n - ch p - ch v dss 20v - 20v r dson ( typ .) 3 8 mohm 64 mohm i d 4.8 a 2 .9 a t so p - 6 marking and p in assignment schematic diagram ? advanced trench mosfet process technology ? special designed for load switching and buttery protection applications ? 1 50 operating temperature it utilizes the latest trench processing techniques to ach ieve the high cell density and reduces the on - resistance with high repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in load switching and a wide variety of other applications 2145c
ssf 2145ch6 ? silikron semiconductor co.,ltd . 2011.0 7 . 2 2 version : 1.0 page 2 of 6 www.silikron.com electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v (br )dss drain - to - source breakdown voltage n - channel 20 v v gs = 0v, id = 250a 22 t j = 125 c p - channel - 20 v gs = 0v, id = - 250a - 22 t j = 125 c r ds(on) static drain - to - source on - resistance n - channel 38 55 m v gs = 4.5 v,i d = 3.6 a p - channel 68 80 v gs = - 4.5 v,i d = - 3 a n - channel 64 75 v gs = 2.5 v,i d = 3.1 a p - channel 89 100 v gs = - 3.5 v,i d = - 2 a v gs(th) gate threshold voltage n - channel 0.4 0.72 1 v v ds = v gs , i d = 250 a p - channel 0.4 0.56 1 t j = 125 c n - ch annel - 0.4 - 0.78 - 1 v ds = v gs , i d = - 250 a p - channel - 0.4 - 0.66 - 1 t j = 125 c i dss drain - to - source leakage current n - channel 1 a v ds = 2 0 v,v gs = 0v p - channel - 1 v ds = - 2 0 v,v gs = 0v i gss gate - to - source forward leakage n - channel 1 00 na v gs = 8 v n - channel - 1 00 v gs = - 8 v p - channel 1 00 v gs = 8 v p - channel - 1 00 v gs = - 8 v ciss input capacitance n - channel 348 420 pf vgs = 0v , vds = 10 v , ? = 1.0mhz coss output capacitance n - channel 58 70 crss rev erse transfer capacitance n - channel 32 39 ciss input capacitance p - channel 519 622 vgs = 0v , vds = - 10 v , ? = 1.0mhz coss output capacitance p - channel 7 5 90 crss reverse transfer capacitance p - channel 58 70 source - drain ratings a nd characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) n - channel 4.8 a mosfet symbol showing the integral reverse p - n junction diode. p - channel - 2.9 i sm pulsed source current ( body d iode ) n - channel 17 a p - channel - 11 v sd diode forward voltage n - channel 0. 69 1. 2 v i s = 0.94 a, v gs =0v p - channel - 0. 72 - 1.2 i s = - 0.75 a, v gs =0v
ssf 2145ch6 ? silikron semiconductor co.,ltd . 2011.0 7 . 2 2 version : 1.0 page 3 of 6 www.silikron.com notes : the maximum current rating is limited by bond - wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - ambient thermal resistance. the value of r j a is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c
ssf 2145ch6 ? silikron semiconductor co.,ltd . 2011.0 7 . 2 2 version : 1.0 page 4 of 6 www.silikron.com mechanical data n otes dimensions are inclusive of plating package body sizes exclude mold flash and gate burrs. mold flash at the non - lead sides should be less than 6 mils dimension l is measured in gauge plane. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. symbol m illimeters min max a 0.90 1.10 a1 0.10 b 0.30 0.50 c 0.08 0.20 d 2.70 3.10 e 2.60 3.00 e1 1.40 1.80 e 0.95 bsc l 0.35 0.55
ssf 2145ch6 ? silikron semiconductor co.,ltd . 2011.0 7 . 2 2 version : 1.0 page 5 of 6 www.silikron.com orde ring and marking information device marking: 2145c package (available) t so p - 6 operating temperature range c : - 55 to 1 50 oc devices per unit package type units/ tube tubes/ inner box units/ inner box inner boxes/ carton box units/ carton box tsop - 6 30 00pcs 10pcs 30000pcs 4pcs 120000pcs reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 or 1 50 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =1 25 or 1 50 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
ssf 2145ch6 ? silikron semiconductor co.,ltd . 2011.0 7 . 2 2 version : 1.0 page 6 of 6 www.silikron.com attention: any and all silikron p roducts described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should a lways evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is pos sible that these probabilistic failures could give rise to accident s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that th ese kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(inclu ding technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accorda nce with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and re liable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to pr oduct/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@silikron.com technical support: technical@silikron.com suzhou silikron semiconductor corp. building 11a suchun industrial square, 428# xinglong street, suzhou p.r. chin a tel: (86 - 512) 62560688 fax: (86 - 512) 65160705 e - mail: sales@silikron.com
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